| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| G2711-01 | Active area size:1.3x1.3mm; reverse voltage:5V; GaAsP photodiode - diffusion type. For visible light detection. For analytical instruments and color identification | distributor | Plastic | 4 | -30°C | 80°C | 172 K |
| HGTG27N120BN | 72A, 1200V, NPT Series N-Channel IGBT | Fairchild-Semiconductor | - | - | - | - | 212 K |
| KM4132G271BQ-10 | 128K x 32bit x 2 banks synchronous graphic RAM, 3.3V, LVTTL, 10ns | Samsung-Electronic | QFP | 100 | 0°C | 70°C | 1 M |
| KM4132G271BQ-7 | 128K x 32bit x 2 banks synchronous graphic RAM, 3.3V, LVTTL, 7ns | Samsung-Electronic | QFP | 100 | 0°C | 70°C | 1 M |
| KM4132G271BQ-8 | 128K x 32bit x 2 banks synchronous graphic RAM, 3.3V, LVTTL, 8ns | Samsung-Electronic | QFP | 100 | 0°C | 70°C | 1 M |
| KM4132G271BQR-10 | 128K x 32bit x 2 banks synchronous graphic RAM, 3.3V, LVTTL, 10ns | Samsung-Electronic | QFP Reverse Type | 100 | 0°C | 70°C | 1 M |
| KM4132G271BQR-7 | 128K x 32bit x 2 banks synchronous graphic RAM, 3.3V, LVTTL, 7ns | Samsung-Electronic | QFP Reverse Type | 100 | 0°C | 70°C | 1 M |
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