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G4BC20S

Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
IRG4BC20SInsulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 1.4V @ VGE = 15V, IC = 10AInternational-Rectifier-3-55°C150°C157 K
IRG4BC20SDInsulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 1.4V @ VGE = 15V, IC = 10AInternational-Rectifier-3-55°C150°C287 K
IRG4BC20SDInsulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 1.4V @ VGE = 15V, IC = 10AInternational-Rectifier-3-55°C150°C287 K
IRG4BC20SD-SInsulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 1.4V @ VGE = 15V, IC = 10AInternational-RectifierDDPak3-55°C150°C382 K
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