| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| ADG612YRU | 1pC charge injection, 100pA leakage, CMOS +-5V/+5V/+3V quad SPST switch. For automatic test equipment, data acquisition systems, battery-powered systems, communication systems, sample and hold systems, audio signal routing | Analog-Devices | TSSOP | 16 | -40°C | 125°C | 152 K |
| G6121 | Active area size:5mm; extended input voltage:+-15V; infrared detector mudule with preamp non-cooled type: easy-to-use detector module with built-in preamplifier. For infrared detection and CO2 laser detection | distributor | Plastic | 4 | -30°C | 80°C | 196 K |
| G6122 | Active area size:1mm; rated input voltage:+-15 +-0.5V; infrared detector mudule with preamp thermoelectrically cooled type: easy-to-use detector module with built-in preamplifier. For infrared detection and CO2 laser detection | distributor | - | - | 0°C | 40°C | 117 K |
| G6122-03 | Active area size:1mm; rated input voltage:+-15 +-0.5V; infrared detector mudule with preamp thermoelectrically cooled type: easy-to-use detector module with built-in preamplifier. For infrared detection and CO2 laser detection | distributor | - | - | 0°C | 40°C | 117 K |
| G6126 | Active area size:5mm; rated input voltage:+-15 +-0.5V; infrared detector mudule with preamp thermoelectrically cooled type: easy-to-use detector module with built-in preamplifier. For infrared detection and CO2 laser detection | distributor | - | - | 0°C | 40°C | 117 K |
| PVG612 | HEXFET power mosfet photovoltaic relay | International-Rectifier | DIP | 6 | -40°C | 85°C | 274 K |
| PVG612S | HEXFET power mosfet photovoltaic relay | International-Rectifier | DIP | 6 | -40°C | 85°C | 274 K |
| PVG612S-T | HEXFET power mosfet photovoltaic relay | International-Rectifier | DIP | 6 | -40°C | 85°C | 274 K |
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