| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| BSM100GAL120DN2 | 1200V/150A IGBT power module | Infineon-formely-Siemens | - | 7 | - | - | 81 K |
| BSM150GAL120DN2 | 1200V/210A IGBT power module | Infineon-formely-Siemens | - | 7 | - | - | 81 K |
| BSM150GAL120DN2E3166 | 1200V/210A IGBT power module | Infineon-formely-Siemens | - | 7 | - | - | 80 K |
| BSM200GAL120DN2 | 1200V/290A IGBT power module | Infineon-formely-Siemens | - | 7 | - | - | 76 K |
| BSM25GAL120DN2 | 1200V/38A IGBT power module | Infineon-formely-Siemens | - | 7 | - | - | 62 K |
| BSM50GAL120DN2 | 1200V/78A IGBT power module | Infineon-formely-Siemens | - | 7 | - | - | 62 K |
| BSM75GAL120DN2 | 1200V/105A IGBT power module | Infineon-formely-Siemens | - | 7 | - | - | 62 K |
| GAL16V8D-3LJ | High performance E2CMOS PLD | Lattice-Semiconductor-Corporation | PLCC | 20 | 0°C | 75°C | 316 K |
| GAL16V8D-5LJ | High performance E2CMOS PLD | Lattice-Semiconductor-Corporation | PLCC | 20 | 0°C | 75°C | 316 K |
| GAL16V8D-7LP | High performance E2CMOS PLD | Lattice-Semiconductor-Corporation | DIP | 20 | 0°C | 75°C | 316 K |
| 1 [2] [3] [4] [5] [6] [7] [8] [9] [10] |
|---|
