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GAL22V10

Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
GAL22V10B-10LJHigh Performance E2CMOS PLD, 10ns, low powerLattice-Semiconductor-CorporationPLCC280°C75°C386 K
GAL22V10B-15QJHigh Performance E2CMOS PLD, 15ns, quarter powerLattice-Semiconductor-CorporationPLCC280°C75°C386 K
GAL22V10C-5LJHigh Performance E2CMOS PLD, 5ns, low powerLattice-Semiconductor-CorporationPLCC280°C75°C386 K
GAL22V10C-7LPHigh Performance E2CMOS PLD, 7ns, low powerLattice-Semiconductor-CorporationDIP240°C75°C386 K
GAL22V10D-15QJHigh Performance E2CMOS PLD, 15ns, quarter powerLattice-Semiconductor-CorporationPLCC280°C75°C386 K
GAL22V10D-15QPHigh Performance E2CMOS PLD, 15ns, quarter powerLattice-Semiconductor-CorporationDIP240°C75°C386 K
GAL22V10D-4LJHigh performance E2CMOS PLD, 4ns, low powerLattice-Semiconductor-CorporationPLCC280°C75°C386 K
GAL22V10D-5LJHigh Performance E2CMOS PLD, 5ns, low powerLattice-Semiconductor-CorporationPLCC280°C75°C386 K
GAL22V10D-7LJHigh Performance E2CMOS PLD, 7ns, low powerLattice-Semiconductor-CorporationPLCC280°C75°C386 K
GAL22V10D-7LPHigh Performance E2CMOS PLD, 7ns, low powerLattice-Semiconductor-CorporationDIP240°C75°C386 K
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