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GAL22V10B

Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
GAL22V10B-10LJHigh Performance E2CMOS PLD, 10ns, low powerLattice-Semiconductor-CorporationPLCC280°C75°C386 K
GAL22V10B-10LPHigh Performance E2CMOS PLD, 10ns, low powerLattice-Semiconductor-CorporationDIP240°C75°C386 K
GAL22V10B-15LJHigh Performance E2CMOS PLD, 15ns, low powerLattice-Semiconductor-CorporationPLCC280°C75°C386 K
GAL22V10B-15LPHigh Performance E2CMOS PLD, 15ns, low powerLattice-Semiconductor-CorporationDIP240°C75°C386 K
GAL22V10B-15QJHigh Performance E2CMOS PLD, 15ns, quarter powerLattice-Semiconductor-CorporationPLCC280°C75°C386 K
GAL22V10B-15QPHigh Performance E2CMOS PLD, 15ns, quarter powerLattice-Semiconductor-CorporationDIP240°C75°C386 K
GAL22V10B-25QJHigh Performance E2CMOS PLD, 25ns, quarter powerLattice-Semiconductor-CorporationPLCC280°C75°C386 K
GAL22V10B-25QPHigh Performance E2CMOS PLD, 25ns, quarter powerLattice-Semiconductor-CorporationDIP240°C75°C386 K
GAL22V10B-7LJHigh Performance E2CMOS PLD, 7ns, low powerLattice-Semiconductor-CorporationPLCC280°C75°C386 K
GAL22V10B-7LPHigh Performance E2CMOS PLD, 7ns, low powerLattice-Semiconductor-CorporationDIP240°C75°C386 K
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