| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| M5M29GB160BVP-80 | CMOS 3.3V-only block erase flash memory | Mitsubishi-Electric-Corporation-Semiconductor-Group | TSOP | 48 | -20°C | 75°C | 229 K |
| M5M29GB161BWG | CMOS 3.3V-only block erase flash memory | Mitsubishi-Electric-Corporation-Semiconductor-Group | TSOP | 48 | -20°C | 75°C | 200 K |
| M5M29GB161BWG | 16777216-bit CMOS 3.3V-only, block erase flash memory | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 48 | -20°C | 85°C | 197 K |
| M6MGB160S2BVP | CMOS 3.3V only flash memory | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 48 | -20°C | 85°C | 258 K |
| M6MGB160S4BVP | CMOS 3.3V only flash memory | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 48 | -20°C | 85°C | 257 K |
| M6MGB162S2BVP | CMOS 3.3V only flash memory | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 48 | -20°C | 85°C | 235 K |
| M6MGB162S4BVP | CMOS 3.3V only flash memory | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 48 | -20°C | 85°C | 239 K |
| M6MGB166S2BWG | CMOS 3.3V only flash memory | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 72 | -20°C | 85°C | 253 K |
| MWS11-GB11-X1 | Gain Block (InGaP HBT) | Microsemi-Corporation | - | - | - | - | 78 K |
| UGB18DCT | Ultrafast Efficient Plastic Rectifier | General-Semiconductor | - | - | - | - | 85 K |
| [1] [2] [3] 4 [5] [6] [7] |
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