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GP7n

Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
IXGP7N60B600V HiPerFET power MOSFETdistributor-3-55°C150°C70 K
IXGP7N60C600V HiPerFET power IGBTdistributor-3-55°C150°C50 K
IXGP7N60CD1600V HiPerFAST IGBT with diodedistributor-3-55°C150°C52 K
MGP7N60EInsulated Gate Bipolar Transistor N-ChannelON-Semiconductor-3--118 K
MGP7N60EDInsulated Gate Bipolar Transistor with Anti-Parallel Diode N-ChannelON-Semiconductor-3--144 K
MGP7N80EInsulated gate bipolar transistorMotorola-3-55°C150°C122 K
STGP7NB120SDN-CHANNEL 7A 1200V TO-220 POWERMESH IGBTSGS-Thomson-Microelectronics----244 K
STGP7NB60HN-CHANNEL 7A - 600V TO-220 POWERMESH IGBTSGS-Thomson-Microelectronics----86 K
STGP7NB60HDN-CHANNEL 7A - 600V TO-220/TO-220FP POWERMESH IGBTSGS-Thomson-Microelectronics----103 K
STGP7NB60HDFPN-CHANNEL 7A - 600V TO-220/TO-220FP POWERMESH IGBTSGS-Thomson-Microelectronics----103 K
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