| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| CGY2032TS/C1 | DECT 500 mW power amplifier | Philips-Semiconductors | SOT369 | - | - | - | 60 K |
| CGY21 | GaAs MMIC | Infineon-formely-Siemens | - | 4 | - | - | 130 K |
| CGY2105ATS | High dynamic range dual LNA MMIC | Philips-Semiconductors | - | - | - | - | 83 K |
| MGY20N120D | Insulated gate bipolar transistor | Motorola | - | 3 | -55°C | 150°C | 254 K |
| MGY20N120D | Insulated gate bipolar transistor | Motorola | - | 3 | -55°C | 150°C | 254 K |
| MGY20N120D | Insulated Gate Bipolar Transistor with Anti-Parallel Diode N-Channel | ON-Semiconductor | - | 3 | - | - | 171 K |
| MGY25N120 | Insulated gate bipolar transistor | Motorola | - | 3 | -55°C | 150°C | 228 K |
| MGY25N120 | Insulated Gate Bipolar Transistor N-Channel | ON-Semiconductor | - | 3 | - | - | 153 K |
| MGY25N120D | Insulated gate bipolar transistor | Motorola | - | 3 | -55°C | 150°C | 256 K |
| MGY25N120D | Insulated Gate Bipolar Transistor with Anti-Parallel Diode N-Channel | ON-Semiconductor | - | 3 | - | - | 171 K |
| [1] 2 [3] [4] |
|---|
