| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| IXBH15N140 | 1400V high voltage BIMOSFET monolithic bipolar MOS transistor | distributor | - | 3 | -55°C | 150°C | 63 K |
| IXBH15N160 | 1600V high voltage BIMOSFET monolithic bipolar MOS transistor | distributor | - | 3 | -55°C | 150°C | 63 K |
| IXGH15N120B | 1200V HiPerFAST IGBT | distributor | - | 3 | -55°C | 150°C | 170 K |
| IXSH15N120BD1 | 1200V high voltage IGBT with diode | distributor | - | 3 | -55°C | 150°C | 56 K |
| SGH15N120RUF | Short Circuit Rated IGBT | Fairchild-Semiconductor | - | - | - | - | 495 K |
| SGH15N120RUFD | Short Circuit Rated IGBT | Fairchild-Semiconductor | - | - | - | - | 556 K |
| SGH15N60RUF | Short Circuit Rated IGBT | Fairchild-Semiconductor | - | - | - | - | 559 K |
| SGH15N60RUF | Short Circuit Rated IGBT | Fairchild-Semiconductor | - | - | - | - | 559 K |
| SGH15N60RUFD | Short Circuit Rated IGBT | Fairchild-Semiconductor | - | - | - | - | 612 K |
| STH15NB50FI | Transistor polarity N Channel Current Id cont. 10.6 A Voltage isolation 4 kV Pitch lead 5.45 mm Power Ptot 80 W Voltage Vds max 500 V Resistance Rds on 0.36 R Current Id cont @ 100 degree C 6.6 A | SGS-Thomson-Microelectronics | - | - | - | - | 110 K |
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