| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| HGTH20N0E1 | 15A, 20A, 400V and 500V N-Channel IGBTs | Intersil-Corporation | - | - | - | - | 35 K |
| HGTH20N40C1 | 15A, 20A, 400V and 500V N-Channel IGBTs | Intersil-Corporation | - | - | - | - | 35 K |
| HGTH20N40C1D | 20A, 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast Diodes | Intersil-Corporation | - | - | - | - | 35 K |
| HGTH20N40E1 | 15A, 20A, 400V and 500V N-Channel IGBTs | Intersil-Corporation | - | - | - | - | 35 K |
| HGTH20N40E1D | 20A, 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast Diodes | Intersil-Corporation | - | - | - | - | 35 K |
| HGTH20N50C1 | 15A, 20A, 400V and 500V N-Channel IGBTs | Intersil-Corporation | - | - | - | - | 35 K |
| HGTH20N50C1D | 20A, 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast Diodes | Intersil-Corporation | - | - | - | - | 35 K |
| HGTH20N50E1D | 20A, 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast Diodes | Intersil-Corporation | - | - | - | - | 35 K |
| IXFH20N60 | 600V HiPerFET power MOSFET | distributor | - | 3 | -55°C | 150°C | 82 K |
| IXTH20N60 | 600V HiPerFET power MOSFET | distributor | - | 3 | -55°C | 150°C | 105 K |
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