Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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FH2114 | 30-90 MHz, RF MOSFET power transformer, 8W, 12V | M-A-COM---manufacturer-of-RF | - | - | -20°C | 85°C | 90 K |
FH2164 | 30-90 MHz, RF MOSFET power transformer, 8W, 12V | M-A-COM---manufacturer-of-RF | - | - | -20°C | 85°C | 90 K |
IXFH21N50 | 500V HiPerFET power MOSFET | distributor | - | 3 | -55°C | 150°C | 158 K |
IXTH21N50 | 500V HiPerFET power MOSFET | distributor | - | 3 | -55°C | 150°C | 108 K |
R1170H211A-T1 | 800mA LDO regulator. Output voltage 2.1V. Built-in chip enable circuit, active at L. Taping type T1. | distributor | - | 5 | -40°C | 85°C | 261 K |
R1170H211A-T2 | 800mA LDO regulator. Output voltage 2.1V. Built-in chip enable circuit, active at L. Taping type T2. | distributor | - | 5 | -40°C | 85°C | 261 K |
R1170H211B-T1 | 800mA LDO regulator. Output voltage 2.1V. Built-in chip enable circuit, active at H. Taping type T1. | distributor | - | 5 | -40°C | 85°C | 261 K |
R1170H211B-T2 | 800mA LDO regulator. Output voltage 2.1V. Built-in chip enable circuit, active at H. Taping type T2. | distributor | - | 5 | -40°C | 85°C | 261 K |
R3111H211A-T1 | Low voltage detector. Detector threshold (-Vdet) 2.1V. Output type: Nch open drain. | distributor | - | 3 | -40°C | 85°C | 205 K |
R3111H211A-T1 | Low voltage detector. Detector threshold (-Vdet) 2.1V. Output type: Nch open drain. | distributor | - | 3 | -40°C | 85°C | 205 K |
R3111H211C-T1 | Low voltage detector. Detector threshold (-Vdet) 2.1V. Output type: CMOS | distributor | - | 3 | -40°C | 85°C | 205 K |
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