Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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1MBH30D-060 | Fuji discrete package IGBT | distributor | - | 3 | - | - | 272 K |
H30D05 | 30Ampere switchmode dual high efficiency power rectifier | distributor | - | 3 | -65°C | 150°C | 141 K |
H30D10 | 30Ampere switchmode dual high efficiency power rectifier | distributor | - | 3 | -65°C | 150°C | 141 K |
IRGPH30MD2 | Insulated gate bipolar transistor with ultrafast soft recovery diode | International-Rectifier | - | 3 | -55°C | 150°C | 86 K |
IRGPH30S | Insulated gate bipolar transistor | International-Rectifier | - | 3 | -55°C | 150°C | 82 K |
S-24H30I10 | Serial non-volatile RAM | Seiko-Epson-Corporation | DIP | 8 | -40°C | 85°C | 857 K |
S-24H30IF10 | Serial non-volatile RAM | Seiko-Epson-Corporation | SOP | 8 | -40°C | 85°C | 857 K |
SFH309F-5 | Silicon NPN phototransistor | Infineon-formely-Siemens | 3 mm LED plastic pac | 2 | -55°C | 100°C | 278 K |
SFH309P | Silicon NPN phototransistor | Infineon-formely-Siemens | 3 mm LED plastic pac | 2 | -55°C | 100°C | 274 K |
SFH309PFA | Silicon NPN phototransistor | Infineon-formely-Siemens | 3 mm LED plastic pac | 2 | -55°C | 100°C | 274 K |
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