| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| FCH30A03L | 30 V, diode | distributor | TO | 3 | -40°C | 150°C | 30 K |
| FCH30A04 | 40 V, diode | distributor | TO | 3 | -40°C | 150°C | 30 K |
| FCH30A06 | 60 V, diode | distributor | TO | 3 | -40°C | 150°C | 30 K |
| FCH30A09 | 90 V, diode | distributor | TO | 3 | -40°C | 150°C | 28 K |
| FCH30A10 | 100 V, diode | distributor | TO | 3 | -40°C | 150°C | 28 K |
| FCH30A15 | 150 V, diode | distributor | TO | 3 | -40°C | 150°C | 28 K |
| GCH30A09 | 90 V, diode | distributor | TO | 3 | -40°C | 150°C | 29 K |
| IRG4PH30K | Insulated gate bipolar transistor. VCES = 1200V, VCE(on)typ. = 3.10V @ VGE = 15V, IC = 10A | International-Rectifier | - | 3 | -55°C | 150°C | 161 K |
| IRG4PH30KD | Insulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 1200V, VCE(on)typ. = 3.10V @ VGE = 15V, IC = 10A | International-Rectifier | - | 3 | -55°C | 150°C | 212 K |
| IRG4PH30KD | Insulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 1200V, VCE(on)typ. = 3.10V @ VGE = 15V, IC = 10A | International-Rectifier | - | 3 | -55°C | 150°C | 212 K |
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