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Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
IXFH4N100Q1000V HiPerFET power MOSFET Q-classdistributor-3-55°C150°C87 K
STH4N90Power dissipation 125 W Transistor polarity N Channel Current Id cont. 4.2 A Current Idm pulse 16 A Pitch lead 5.45 mm Voltage Vds max 900 V Resistance Rds on 3.2 R Temperature current 25 ?CSGS-Thomson-Microelectronics----621 K
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