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H6N100

Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
IXFH6N1001000V HiPerFET power MOSFETdistributor-3-55°C150°C77 K
IXFH6N100F1000V HiPerRF power MOSFETdistributor-3-55°C150°C118 K
STH6N100N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORSSGS-Thomson-Microelectronics----202 K
STH6N100FIN-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORSSGS-Thomson-Microelectronics----202 K
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