| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| FDH700 | ULTRA FAST DIODE | Fairchild-Semiconductor | - | - | - | - | 43 K |
| IXFH70N15 | 150V HiPerFET power MOSFET | distributor | - | 3 | -55°C | 150°C | 53 K |
| RH5RH703B-T1 | PWM step-up DC/DC converter. Output voltage 7.0V. Internal Tr./External Tr. (selectively available) (oscillator frequency 100kHz, with chip enable function). Taping type T1 | distributor | - | 5 | -30°C | 80°C | 199 K |
| RH5RH703B-T1 | PWM step-up DC/DC converter. Output voltage 7.0V. Internal Tr./External Tr. (selectively available) (oscillator frequency 100kHz, with chip enable function). Taping type T1 | distributor | - | 5 | -30°C | 80°C | 199 K |
| RH5RH703B-T2 | PWM step-up DC/DC converter. Output voltage 7.0V. Internal Tr./External Tr. (selectively available) (oscillator frequency 100kHz, with chip enable function). Taping type T2 | distributor | - | 5 | -30°C | 80°C | 199 K |
| SH702 | 90 Watt, silicon gate enhancement mode RF power VDMOS transistor | distributor | - | 4 | -65°C | 150°C | 36 K |
| SH703 | 130 Watt, silicon gate enhancement mode RF power VDMOS transistor | distributor | - | 4 | -65°C | 150°C | 37 K |
| SSH70N10A | Advanced Power MOSFET | Fairchild-Semiconductor | - | - | - | - | 262 K |
| TSH70CD | WIDE BAND, LOW POWER OPERATIONAL AMPLIFIER | SGS-Thomson-Microelectronics | - | - | - | - | 1 M |
| TSH70CDT | WIDE BAND, LOW POWER OPERATIONAL AMPLIFIER | SGS-Thomson-Microelectronics | - | - | - | - | 1 M |
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