| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| H8567-01 | Input voltage: 11.5-15.5V; max input current:7-25mA; compact side-on PMT: photosensor module | distributor | - | - | 5°C | 50°C | 81 K |
| H8567-02 | Input voltage: 11.5-15.5V; max input current:7-25mA; compact side-on PMT: photosensor module | distributor | - | - | 5°C | 50°C | 81 K |
| H8567-03 | Input voltage: 11.5-15.5V; max input current:7-25mA; compact side-on PMT: photosensor module | distributor | - | - | 5°C | 50°C | 81 K |
| NDH8502P | Dual P-Channel Enhancement Mode Field Effect Transistor [Not recommended for new designs] | Fairchild-Semiconductor | - | - | - | - | 72 K |
| NDH8503N | Dual N-Channel Enhancement Mode Field Effect Transistor [Obsolete] | Fairchild-Semiconductor | - | - | - | - | 70 K |
| NDH8504P | Dual P-Channel Enhancement Mode Field Effect Transistor [Not recommended for new designs] | Fairchild-Semiconductor | - | - | - | - | 210 K |
| NDH8520C | Dual N & P-Channel Enhancement Mode Field Effect Transistor [Obsolete] | Fairchild-Semiconductor | - | - | - | - | 228 K |
| NDH8521C | Dual N & P-Channel Enhancement Mode Field Effect Transistor [Not recommended for new designs] | Fairchild-Semiconductor | - | - | - | - | 101 K |
| NDH853N | Length/Height 1.02 mm Width 4.55 mm Depth 4.06 mm Power dissipation 1.8 W Transistor polarity N Channel Current Id cont. 7.6 A Voltage Vgs th max. 4.5 V Voltage Vds max 30 V | Fairchild-Semiconductor | - | - | - | - | 82 K |
| NDH854P | Length/Height 1.02 mm Width 4.55 mm Depth 4.06 mm Power dissipation 1.8 W Transistor polarity P Channel Current Id cont. 5.1 A Voltage Vgs th max. 4.5 V Voltage Vds max 30 V | Fairchild-Semiconductor | - | - | - | - | 85 K |
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