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HB-10

Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
MH16S64PHB-101,073,741,824-bit (16,777,216-word by 64-bit) synchronous DRAMMitsubishi-Electric-Corporation-Semiconductor-Group--0°C70°C589 K
MH16S72PHB-101,207,959,552-bit (16,777,216-word by 72-bit) synchronous DRAMMitsubishi-Electric-Corporation-Semiconductor-Group--0°C70°C590 K
MH32S64PHB-102,147,483,648-bit (33,554,432-word by 64-bit) synchronous DRAMMitsubishi-Electric-Corporation-Semiconductor-Group--0°C70°C593 K
MH32S64PHB-10214683648-bit synchronous DRAMMitsubishi-Electric-Corporation-Semiconductor-GroupTSOP1680°C70°C593 K
MH32S72PHB-102,415,919,104-bit (33,554,432-word by 72-bit) synchronous DRAMMitsubishi-Electric-Corporation-Semiconductor-Group--0°C70°C595 K
MH32S72PHB-102415919104-bit synchronous DRAMMitsubishi-Electric-Corporation-Semiconductor-GroupTSOP1680°C70°C595 K
MH8S64PHB-101073741824-bit synchronous DRAMMitsubishi-Electric-Corporation-Semiconductor-GroupTSOP1680°C70°C589 K
MH8S72PHB-101207959552-bit synchronous DRAMMitsubishi-Electric-Corporation-Semiconductor-GroupTSOP1680°C70°C590 K
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