| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| HN27C4000G-12 | 524288-word x 8-Bit/262144-word x 16-bit CMOS UV erasable and programmable ROM, 120ns | distributor | CERDIP | 40 | 0°C | 70°C | 124 K |
| HN27C4000G-15 | 524288-word x 8-Bit/262144-word x 16-bit CMOS UV erasable and programmable ROM, 150ns | distributor | CERDIP | 40 | 0°C | 70°C | 124 K |
| HN29V51211T-50 | 512M AND type flash memory more than 32,113-sector (542,581,248-bit) | distributor | plastic TSOP I | 48 | 0°C | 70°C | 306 K |
| HN29W12811T-60 | 128M AND type flash memory more than 8,029-sector (135,657,984-bit) | distributor | plastic TSOP I | 48 | 0°C | 70°C | 315 K |
| HN29W25611T-50 | 256M AND type flash memory more than 16,057-sector (271,299,072-bit) | distributor | plastic TSOP I | 48 | 0°C | 70°C | 347 K |
| HN29W25611T-50H | 256M AND type flash memory more than 16,057-sector (271,299,072-bit) | distributor | plastic TSOP I | 48 | 0°C | 70°C | 331 K |
| IRHN2C50SE | HEXFET transistor | International-Rectifier | - | 2 | -55°C | 150°C | 110 K |
| PHN203 | Dual N-channel enhancement mode TrenchMOS transistor | Philips-Semiconductors | SOT96 | - | - | - | 98 K |
| PHN210 | Dual N-channel enhancement mode TrenchMOS transistor | Philips-Semiconductors | SOT96 | - | - | - | 109 K |
| PHN210 | 30 V, dual N-channel enhancement mode tranchMOS transistor | Philips-Semiconductors | SO | 8 | -65°C | 150°C | 87 K |
| 1 [2] [3] [4] |
|---|
