| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| KHX3681A01 | Duplexer | Korea-Electronics-Co--Ltd- | - | - | - | - | 37 K |
| KHX3681B02 | Duplexer | Korea-Electronics-Co--Ltd- | - | - | - | - | 14 K |
| KHX3681C01 | Duplexer | Korea-Electronics-Co--Ltd- | - | - | - | - | 14 K |
| PHX3055E | 55 V, N-channel trenchMOS transistor | Philips-Semiconductors | SOT | 3 | -55°C | 150°C | 96 K |
| PHX3055L | 60 V, power MOS transistor logic level FET | Philips-Semiconductors | SOT | 3 | -55°C | 150°C | 56 K |
| PHX3N40E | 400 V, power MOS transistor avalanche energy rated | Philips-Semiconductors | SOT | 3 | -55°C | 150°C | 64 K |
| PHX3N40E | 400 V, power MOS transistor avalanche energy rated | Philips-Semiconductors | SOT | 3 | -55°C | 150°C | 64 K |
| PHX3N50E | PowerMOS transistor. Avalanche energy rated. | Philips-Semiconductors | SOT186A | 3 | -55°C | 150°C | 72 K |
| PHX3N60E | 600 V, power MOS transistor avalanche energy rated | Philips-Semiconductors | SOT | 3 | -55°C | 150°C | 73 K |
| PHX3N60E | 600 V, power MOS transistor avalanche energy rated | Philips-Semiconductors | SOT | 3 | -55°C | 150°C | 73 K |
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