Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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ASI2001 | NPN silicon RF power transistor | Advanced-Semiconductor-Inc- | - | 2 | -65°C | 200°C | 18 K |
ASI2003 | NPN silicon RF power transistor | Advanced-Semiconductor-Inc- | - | 2 | -65°C | 200°C | 18 K |
ASI2005 | NPN silicon RF power transistor | Advanced-Semiconductor-Inc- | - | 2 | -65°C | 200°C | 18 K |
ASI2010 | NPN silicon RF power transistor | Advanced-Semiconductor-Inc- | - | 2 | -65°C | 200°C | 18 K |
ATF1516AS-15QHI208 | High performance EE-based CPDL, 100 MHz | ATMEL-Corporation | plastic RQFP | 208 | -40°C | 85°C | 266 K |
ATF1516ASL-20QHI208 | High performance EE-based CPDL, 83.3 MHz | ATMEL-Corporation | plastic RQFP | 208 | -40°C | 85°C | 266 K |
ATF1516ASL-25QHI208 | High performance EE-based CPDL, 70 MHz | ATMEL-Corporation | plastic RQFP | 208 | -40°C | 85°C | 266 K |
ISPLSI2032E-225LJ44 | 225 MHz in-system prommable superFAST high density PLD | Lattice-Semiconductor-Corporation | PLCC | 44 | 0°C | 70°C | 173 K |
ISPLSI2032E-225LT44 | 225 MHz in-system prommable superFAST high density PLD | Lattice-Semiconductor-Corporation | TQFP | 44 | 0°C | 70°C | 173 K |
ISPLSI2032E-225LT48 | 225 MHz in-system prommable superFAST high density PLD | Lattice-Semiconductor-Corporation | TQFP | 48 | 0°C | 70°C | 173 K |
[1] [2] [3] [4] 5 [6] [7] [8] [9] [10] |
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