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IRC840

Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
IRC840HEXFET power MOSFET. Continuous drain current 8.0A @ Tc=25degC, Vgs=10V. Drain-to-source breakdown voltage 500V. Drain-to-source on-resistance 0.85 OhmInternational-Rectifier-5-55°C150°C220 K
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