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Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
IRF13012A and 14A, 80V and 100V, 0.16 and 0.23 Ohm, N-Channel Power MOSFETsIntersil-Corporation----56 K
IRF130Repetitive avalanche and dv/dt rated HEXFET transistor thru-hole(TO-204AA/AE). BVDSS =100V, RDS(on) = 0.18 Ohm, ID = 14AInternational-Rectifier-3-55°C150°C147 K
IRF130100V Vdss N-Channel FET (field effect transistor)Semelab-Plc-TO3---22 K
IRF1302Power MOSFET, 20V, 180AInternational-Rectifier-3-55°C175°C523 K
IRF1302LPower MOSFET, 20V, 174AInternational-Rectifier-3-55°C175°C229 K
IRF1302SPower MOSFET, 20V, 174AInternational-RectifierD2PAK3-55°C175°C229 K
IRF130SMD100V Vdss N-Channel FET (field effect transistor)Semelab-Plc-SMD1---22 K

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