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IRF14

Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
IRF14028A and 25A, 80V and 100V, 0.077 and 0.100 Ohm, N-Channel Power MOSFETsIntersil-Corporation----55 K
IRF140Repetitive avalanche and dv/dt rated HEXFET transistor thru-hole. BVDSS = 100V, RDS(on) = 0.077 Ohm, ID = 28A.International-Rectifier-3-55°C175°C144 K
IRF140Repetitive avalanche and dv/dt rated HEXFET transistor thru-hole. BVDSS = 100V, RDS(on) = 0.077 Ohm, ID = 28A.International-Rectifier-3-55°C175°C144 K
IRF140Repetitive avalanche and dv/dt rated HEXFET transistor thru-hole. BVDSS = 100V, RDS(on) = 0.077 Ohm, ID = 28A.International-Rectifier-3-55°C175°C144 K
IRF140100V Vdss N-Channel FET (field effect transistor)Semelab-Plc-TO3---22 K
IRF1404HEXFET power MOSFET. VDSS = 40V, RDS(on) = 0.004 Ohm, ID = 162A.International-Rectifier-3-55°C175°C107 K
IRF1404SHEXFET power MOSFET. VDSS = 40V, RDS(on) = 0.004 Ohm, ID = 162A.International-RectifierDDPak3-55°C175°C306 K
IRF140SMD100V Vdss N-Channel FET (field effect transistor)Semelab-Plc-TO3---22 K
IRF14228A and 25A, 80V and 100V, 0.077 and 0.100 Ohm, N-Channel Power MOSFETsIntersil-Corporation----55 K
IRF14328A and 25A, 80V and 100V, 0.077 and 0.100 Ohm, N-Channel Power MOSFETsIntersil-Corporation----55 K
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