Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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IRF430 | Repetitive avalanche and dv/dt rated HEXFET transistor thru-hole(TO-204AA/AE). BVDSS = 500V, RDS(on) = 1.5 Ohm, ID = 4.5A | International-Rectifier | - | 3 | -55°C | 150°C | 146 K |
IRF450 | Power dissipation 125 W Transistor polarity N Channel Centres fixing 30 mm Current Id cont. 13 A Current Idm pulse 52 A Pitch lead 11 mm Voltage Vds max 500 V Resistance Rds on 0.4 R | Fairchild-Semiconductor | - | - | - | - | 56 K |
IRF450 | Repetitive avalanche and dv/dt rated HEXFET transistor thru-hole(TO-204AA/AE). BVDSS = 500V, RDS(on) = 0.400 Ohm, ID = 12A | International-Rectifier | - | 3 | -55°C | 150°C | 144 K |
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