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IRF430

Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
IRF4304.0A and 4.5A, 450V and 500V, 1.5 and 2.0 Ohm, N-Channel Power MOSFETsIntersil-Corporation----56 K
IRF430Repetitive avalanche and dv/dt rated HEXFET transistor thru-hole(TO-204AA/AE). BVDSS = 500V, RDS(on) = 1.5 Ohm, ID = 4.5AInternational-Rectifier-3-55°C150°C146 K
IRF430500V Vdss N-Channel FET (field effect transistor)Semelab-Plc-TO3---21 K
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