| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| IRF450 | Power dissipation 125 W Transistor polarity N Channel Centres fixing 30 mm Current Id cont. 13 A Current Idm pulse 52 A Pitch lead 11 mm Voltage Vds max 500 V Resistance Rds on 0.4 R | Fairchild-Semiconductor | - | - | - | - | 56 K |
| IRF450 | 11A and 13A, 450V and 500V, 0.4 and 0.5 Ohm, N-Channel Power MOSFETs | Intersil-Corporation | - | - | - | - | 56 K |
| IRF450 | Repetitive avalanche and dv/dt rated HEXFET transistor thru-hole(TO-204AA/AE). BVDSS = 500V, RDS(on) = 0.400 Ohm, ID = 12A | International-Rectifier | - | 3 | -55°C | 150°C | 144 K |
| IRF450 | 500V Vdss N-Channel FET (field effect transistor) | Semelab-Plc- | TO3 | - | - | - | 19 K |
| IRF451 | 11A and 13A, 450V and 500V, 0.4 and 0.5 Ohm, N-Channel Power MOSFETs | Intersil-Corporation | - | - | - | - | 56 K |
| IRF452 | 11A and 13A, 450V and 500V, 0.4 and 0.5 Ohm, N-Channel Power MOSFETs | Intersil-Corporation | - | - | - | - | 56 K |
| IRF452 | 11A and 13A, 450V and 500V, 0.4 and 0.5 Ohm, N-Channel Power MOSFETs | Intersil-Corporation | - | - | - | - | 56 K |
| IRF453 | 11A and 13A, 450V and 500V, 0.4 and 0.5 Ohm, N-Channel Power MOSFETs | Intersil-Corporation | - | - | - | - | 56 K |
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