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Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
IRF450Power dissipation 125 W Transistor polarity N Channel Centres fixing 30 mm Current Id cont. 13 A Current Idm pulse 52 A Pitch lead 11 mm Voltage Vds max 500 V Resistance Rds on 0.4 RFairchild-Semiconductor----56 K
IRF45011A and 13A, 450V and 500V, 0.4 and 0.5 Ohm, N-Channel Power MOSFETsIntersil-Corporation----56 K
IRF450Repetitive avalanche and dv/dt rated HEXFET transistor thru-hole(TO-204AA/AE). BVDSS = 500V, RDS(on) = 0.400 Ohm, ID = 12AInternational-Rectifier-3-55°C150°C144 K
IRF450500V Vdss N-Channel FET (field effect transistor)Semelab-Plc-TO3---19 K

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