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IRF510

Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
IRF510N-channel power MOSFET, 100V, 5.6AHarris-Semiconductor-3-55°C175°C68 K
IRF5105.6A, 100V, 0.540 Ohm, N-Channel Power MOSFETIntersil-Corporation----70 K
IRF510HEXFET power MOSFET. VDSS = 100V, RDS(on) = 0.54 Ohm, ID = 5.6AInternational-Rectifier-3-55°C175°C175 K
IRF510AN-CHANNEL POWER MOSFETFairchild-Semiconductor----252 K
IRF510SHEXFET power MOSFET. VDSS = 100V, RDS(on) = 0.54 Ohm, ID = 5.6AInternational-Rectifier-3-55°C175°C178 K
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