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IRF520

Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
IRF5209.2A, 100V, 0.270 Ohm, N-Channel Power MOSFETIntersil-Corporation----69 K
IRF520N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORSSGS-Thomson-Microelectronics----181 K
IRF520FIN-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORSSGS-Thomson-Microelectronics----181 K
IRF520FIN-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORSSGS-Thomson-Microelectronics----181 K
IRF520NHEXFET power MOSFET. VDSS = 100V, RDS(on) = 0.20 Ohm, ID = 9.7AInternational-Rectifier-3-55°C175°C116 K
IRF520NLHEXFET power MOSFET. VDSS = 100V, RDS(on) = 0.20 Ohm, ID = 9.7AInternational-Rectifier-3-55°C175°C185 K
IRF520NSHEXFET power MOSFET. VDSS = 100V, RDS(on) = 0.20 Ohm, ID = 9.7AInternational-RectifierDDPak3-55°C175°C185 K
IRF520VHEXFET power MOSFET. VDSS = 100V, RDS(on) = 0.165 Ohm, ID = 9.6AInternational-Rectifier-3-55°C175°C200 K
IRF520VLHEXFET power MOSFET. VDSS = 100V, RDS(on) = 0.165 Ohm, ID = 9.6AInternational-Rectifier-3-55°C175°C129 K
IRF520VSHEXFET power MOSFET. VDSS = 100V, RDS(on) = 0.165 Ohm, ID = 9.6AInternational-RectifierDDPak3-55°C175°C129 K
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