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IRF530

Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
IRF530N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORSSGS-Thomson-Microelectronics----47 K
IRF5305HEXFET power MOSFET. VDSS = -55V, RDS(on) = 0.06 Ohm, ID = -31AInternational-Rectifier-3-55°C175°C124 K
IRF5305LHEXFET power MOSFET. VDSS = -55V, RDS(on) = 0.06 Ohm, ID = -31AInternational-Rectifier-3-55°C175°C171 K
IRF5305SHEXFET power MOSFET. VDSS = -55V, RDS(on) = 0.06 Ohm, ID = -31AInternational-RectifierDDPak3-55°C175°C171 K
IRF530FIN-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORSSGS-Thomson-Microelectronics----47 K
IRF530FPN-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORSGS-Thomson-Microelectronics----77 K
IRF530N22A, 100V, 0.064 Ohm, N-Channel Power MOSFETIntersil-Corporation----125 K
IRF530NHEXFET power MOSFET. VDSS = 100V, RDS(on) = 90 mOhm, ID = 17AInternational-Rectifier-3-55°C175°C212 K
IRF530NN-channel TrenchMOS transistorPhilips-SemiconductorsSOT78---97 K
IRF530NSHEXFET power MOSFET. VDSS = 100V, RDS(on) = 0.11 Ohm, ID = 17AInternational-RectifierDDPak3-55°C175°C178 K
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