| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| IRF5800 | HEXFET power MOSFET. VDSS = -30V, RDS(on) = 0.085 Ohm | International-Rectifier | TSOP | 6 | -55°C | 150°C | 98 K |
| IRF5801 | HEXFET power MOSFET. VDSS = 200V, RDS(on) = 2.2 Ohm, ID = 0.6A | International-Rectifier | TSOP | 6 | -55°C | 150°C | 120 K |
| IRF5803 | HEXFET power MOSFET. VDSS = -40V, RDS(on) = 112 mOhm, ID = -3.4A @ VGS = -10V, RDS(on) = 190 mOhm , ID = -2.7A @ VGS = -4.5V | International-Rectifier | TSOP | 6 | -55°C | 150°C | 109 K |
| IRF5803D2 | FETKY MOSFET & schottky diode. VDSS = -40V, RDS(on) = 112 mOhm, schottky Vf = 0.51V | International-Rectifier | SO | 8 | -55°C | 150°C | 127 K |
| IRF5804 | HEXFET power MOSFET. VDSS = -40V, RDS(on) = 198 mOhm, ID = -2.5A @ VGS = -10V, RDS(on) = 334 mOhm, ID = -2.0A @ VGS = -4.5V | International-Rectifier | TSOP | 6 | -55°C | 150°C | 99 K |
| IRF5805 | HEXFET power MOSFET. VDSS = -30V, RDS(on) = 0.098 Ohm, ID = -3.8A @ VGS = -10V, RDS(on) = 0.165 Ohm, ID = -3.0A @ VGS = -4.5V | International-Rectifier | TSOP | 6 | -55°C | 150°C | 126 K |
| IRF5806 | HEXFET power MOSFET. VDSS = -20V, RDS(on) = 86 mOhm, ID = -4.0A @ VGS = -4.5V, RDS(on) = 147 mOhm, ID = -3.0A @ VGS = -2.5V | International-Rectifier | Micro6 | 6 | -55°C | 150°C | 218 K |
| IRF5810 | HEXFET power MOSFET. VDSS = -20V, RDS(on) = 90 mOhm, ID = -2.9A @ VGS = -4.5V, RDS(on) = 135 mOhm, ID = -2.3A @ VGS = -2.5V | International-Rectifier | TSOP | 6 | -55°C | 150°C | 208 K |
| IRF5850 | HEXFET power MOSFET. VDSS = -20V, RDS(on) = 0.135 Ohm | International-Rectifier | TSOP | 6 | -55°C | 150°C | 126 K |
| IRF5851 | HEXFET power MOSFET. VDSS = -20V, RDS(on) = 0.135 Ohm (P-Ch). VDSS = 20V, RDS(on) = 0.090 Ohm (N-Ch) | International-Rectifier | TSOP | 6 | -55°C | 150°C | 172 K |
| 1 [2] |
|---|
