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IRF5803

Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
IRF5803HEXFET power MOSFET. VDSS = -40V, RDS(on) = 112 mOhm, ID = -3.4A @ VGS = -10V, RDS(on) = 190 mOhm , ID = -2.7A @ VGS = -4.5VInternational-RectifierTSOP6-55°C150°C109 K
IRF5803D2FETKY MOSFET & schottky diode. VDSS = -40V, RDS(on) = 112 mOhm, schottky Vf = 0.51VInternational-RectifierSO8-55°C150°C127 K
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