| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| IRF730 | 400 V, Power MOS transistor avalanche energy rated | Philips-Semiconductors | SOT | 3 | -55°C | 150°C | 59 K |
| IRF7807VD2 | FETKY MOSFET and schottky diode. VDS = 30V, RDS(on) =17mOhm | International-Rectifier | SO | 8 | -55°C | 150°C | 115 K |
| IRF7809A | HEXFET chipset for DC-DC converter. VDS = 30V, RDS(on) = 8.5mOhm | International-Rectifier | SO | 8 | -55°C | 150°C | 128 K |
| IRF7809A | HEXFET chipset for DC-DC converter. VDS = 30V, RDS(on) = 8.5mOhm | International-Rectifier | SO | 8 | -55°C | 150°C | 128 K |
| IRF7809AV | HEXFET power MOSFET. VDS = 30V, RDS(on) = 7.0mOhm | International-Rectifier | SO | 8 | -55°C | 150°C | 114 K |
| IRF7811A | HEXFET chipset for DC-DC converter. VDS = 28V, RDS(on) = 12mOhm | International-Rectifier | SO | 8 | -55°C | 150°C | 128 K |
| IRF7811AV | HEXFET power MOSFET. VDS = 30V, RDS(on) = 11mOhm | International-Rectifier | SO | 8 | -55°C | 150°C | 86 K |
| IRF7811W | HEXFET power MOSFET for DC-DC converter. VDS = 30V, RDS(on) = 9.0mOhm | International-Rectifier | SO | 8 | -55°C | 150°C | 146 K |
| IRF7822 | HEXFET power MOSFET for DC-DC converter. VDS = 30V, RDS(on) = 5.0mOhm | International-Rectifier | SO | 8 | -55°C | 150°C | 71 K |
| IRF7901D1 | Dual FETKY co-packaged dual MOSFET plus schottky diode . VDS = 30V, RDS(on) = 38mOhm (Q1). VDS = 30V, RDS(on) = 32mOhm (Q2 and schottky). | International-Rectifier | SO | 8 | -55°C | 150°C | 256 K |
| << [3] [4] [5] [6] [7] 8 [9] [10] [11] |
|---|
