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IRF820

Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
IRF8202.5A, 500V, 3.000 Ohm, N-Channel Power MOSFETIntersil-Corporation----54 K
IRF820HEXFET power MOSFET. VDS = 500V, RDS(on) = 3.0Ohm , ID = 2.5AInternational-Rectifier-3-55°C150°C169 K
IRF820N-channel enhancement mode power MOS transistor, 500V, 3.0ASGS-Thomson-Microelectronics-3-65°C150°C169 K
IRF820N-CHANNEL 500V - 2.5 OHM - 2.5A - TO-220 POWERMESH MOSFETSGS-Thomson-Microelectronics----92 K
IRF820AHEXFET power MOSFET. VDS = 500V, RDS(on) = 3.0Ohm , ID = 2.5AInternational-Rectifier-3-55°C150°C100 K
IRF820ALHEXFET power MOSFET. VDS = 500V, RDS(on) = 3.0Ohm , ID = 2.5AInternational-Rectifier-3-55°C150°C133 K
IRF820ASHEXFET power MOSFET. VDS = 500V, RDS(on) = 3.0Ohm , ID = 2.5AInternational-RectifierDDPak3-55°C150°C133 K
IRF820B500V N-Channel MOSFETFairchild-Semiconductor----858 K
IRF820FIN-channel enhancement mode power MOS transistor, 500V, 2.2ASGS-Thomson-MicroelectronicsISOWATT2203-65°C150°C169 K
IRF820SHEXFET power MOSFET. VDS = 500V, RDS(on) = 3.0Ohm , ID = 2.5AInternational-Rectifier-3-55°C150°C172 K
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