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Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
IRF9130-10A and -12A, -80V and -100V, 0.30 and 0.40 Ohm, P-Channel Power MOSFETsIntersil-Corporation----58 K
IRF9130Repetitive avalanche and dv/dt rated HEXFET transistor thru-hole(TO-204AA/AE). BVDSS = -100V, RDS(on) = 0.30 Ohm, ID = -11AInternational-Rectifier-3-55°C150°C149 K
IRF9130100V Vdss P-Channel FET (field effect transistor)Semelab-Plc-TO3---19 K
IRF9130SMD100V Vdss P-Channel FET (field effect transistor)Semelab-Plc-SMD1---20 K

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