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IRF9230

Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
IRF9230-5.5A and -6.5A, -150V and -200V, 0.8 and 1.2 Ohm, P-Channel Power MOSFETsIntersil-Corporation----72 K
IRF9230Repetitive avalanche and dv/dt rated HEXFET transistor thru-hole(TO-204AA/AE). BVDSS = -200V, RDS(on) = 0.80 Ohm, ID = -6.5AInternational-Rectifier-3-55°C150°C149 K
IRF9230200V Vdss P-Channel FET (field effect transistor)Semelab-Plc-TO3---22 K
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