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IRF95

Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
IRF95103.0A, 100V, 1.200 Ohm, P-Channel Power MOSFETIntersil-Corporation----59 K
IRF9510HEXFET power MOSFET. VDSS = -100V, RDS(on) = 1.2 Ohm, ID = -4.0AInternational-Rectifier-3-55°C175°C171 K
IRF9510SHEXFET power MOSFET. VDSS = -100V, RDS(on) = 1.2 Ohm, ID = -4.0AInternational-Rectifier-3-55°C175°C176 K
IRF95206A, 100V, 0.600 Ohm, P-Channel Power MOSFETIntersil-Corporation----57 K
IRF9520NHEXFET power MOSFET. VDSS = -100V, RDS(on) = 0.48 Ohm, ID = -6.8AInternational-Rectifier-3-55°C175°C95 K
IRF9520NSHEXFET power MOSFET. VDSS = -100V, RDS(on) = 0.48 Ohm, ID = -6.8AInternational-RectifierDDPak3-55°C175°C155 K
IRF953012A, 100V, 0.300 Ohm, P-Channel Power MOSFETsIntersil-Corporation----63 K
IRF9530-220M100V Vdss P-Channel FET (field effect transistor)Semelab-Plc-TO257AB(TO220M)---18 K
IRF9530SMD100V Vdss P-Channel FET (field effect transistor)Semelab-Plc-SMD1---22 K
IRF954019A, 100V, 0.200 Ohm, P-Channel Power MOSFETsIntersil-Corporation----59 K
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