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IRF9530

Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
IRF953012A, 100V, 0.300 Ohm, P-Channel Power MOSFETsIntersil-Corporation----63 K
IRF9530P-channel MOSFET, 100V, 12AInternational-Rectifier-3-55°C150°C449 K
IRF9530P-channel MOSFET, 100V, 12ASamsung-Electronic-3-55°C150°C378 K
IRF9530-220M100V Vdss P-Channel FET (field effect transistor)Semelab-Plc-TO257AB(TO220M)---18 K
IRF9530NHEXFET power MOSFET. VDSS = -100V, RDS(on) = 0.20 Ohm, ID = -14AInternational-Rectifier-3-55°C175°C113 K
IRF9530NLHEXFET power MOSFET. VDSS = -100V, RDS(on) = 0.20 Ohm, ID = -14AInternational-Rectifier-3-55°C175°C173 K
IRF9530NSHEXFET power MOSFET. VDSS = -100V, RDS(on) = 0.20 Ohm, ID = -14AInternational-RectifierDDPak3-55°C175°C173 K
IRF9530SMD100V Vdss P-Channel FET (field effect transistor)Semelab-Plc-SMD1---22 K
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