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IRFB9N30

Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
IRFB9N30AHEXFET power MOSFET. VDSS = 300V, RDS(on) = 0.45 Ohm, ID = 9.3AInternational-Rectifier-3-55°C150°C137 K
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