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IRFP250

Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
IRFP250N-channel NEXFET, 200V, 33AInternational-Rectifier-3-55°C160°C493 K
IRFP250200V standart power MOSFETdistributor-3-55°C150°C47 K
IRFP250N-channel power MOSFET, 200V, 30ASamsung-Electronic-3-55°C150°C518 K
IRFP250N-CHANNEL 200V 0.073 OHM 33A TO-247 POWERMESH II MOSFETSGS-Thomson-Microelectronics----255 K
IRFP250B200V N-Channel MOSFETFairchild-Semiconductor----669 K
IRFP250NHEXFET power MOSFET. VDSS = 200V, RDS(on) = 0.075 Ohm, ID = 30AInternational-Rectifier-3-55°C175°C122 K
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