| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| IRFP90N20D | HEXFET power MOSFET. VDSS = 200 V, RDS(on) = 0.023 Ohm, ID = 94 A | International-Rectifier | - | 3 | -55°C | 175°C | 89 K |
| IRFP9130 | P-channel MOSFET, 100V, 12A | Samsung-Electronic | - | 3 | -55°C | 150°C | 378 K |
| IRFP9131 | P-channel MOSFET, 60V, 12A | Samsung-Electronic | - | 3 | -55°C | 150°C | 378 K |
| IRFP9132 | P-channel MOSFET, 100V, 10A | Samsung-Electronic | - | 3 | -55°C | 150°C | 378 K |
| IRFP9133 | P-channel MOSFET, 60V, 10A | Samsung-Electronic | - | 3 | -55°C | 150°C | 378 K |
| IRFP9140 | 19A, 100V, 0.200 Ohm, P-Channel Power MOSFET | Intersil-Corporation | - | - | - | - | 59 K |
| IRFP9140N | HEXFET power MOSFET. VDSS = -100 V, RDS(on) = 0.117 Ohm, ID = -23 A | International-Rectifier | - | 3 | -55°C | 175°C | 142 K |
| IRFP9150 | 25A, 100V, 0.150 Ohm, P-Channel Power MOSFET | Intersil-Corporation | - | - | - | - | 59 K |
| IRFP9240 | 12A, 200V, 0.500 Ohm, P-Channel Power MOSFET | Intersil-Corporation | - | - | - | - | 56 K |
| IRFP9240 | HEXFET power MOSFET. VDSS = -200 V, RDS(on) = 0.50 Ohm, ID = -12 A | International-Rectifier | - | 3 | -55°C | 150°C | 166 K |
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