| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| IRFR9014 | HEXFET power MOSFET. VDSS = -60V, RDS(on) = 0.50 Ohm, ID = -5.1A | International-Rectifier | - | 3 | -55°C | 150°C | 177 K |
| IRFR9014 | HEXFET power MOSFET. VDSS = -60V, RDS(on) = 0.50 Ohm, ID = -5.1A | International-Rectifier | - | 3 | -55°C | 150°C | 177 K |
| IRFR9024 | P-Channel Enhancement Mode Field Effect Transistor [Obsolete] | Fairchild-Semiconductor | - | - | - | - | 379 K |
| IRFR9024 | HEXFET power MOSFET. VDSS = -60V, RDS(on) = 0.28 Ohm, ID = -8.8A | International-Rectifier | - | 3 | -55°C | 150°C | 173 K |
| IRFR9024 | HEXFET power MOSFET. VDSS = -60V, RDS(on) = 0.28 Ohm, ID = -8.8A | International-Rectifier | - | 3 | -55°C | 150°C | 173 K |
| IRFR9024N | HEXFET power MOSFET. VDSS = -55V, RDS(on) = 0.175 Ohm, ID = -11A | International-Rectifier | - | 3 | -55°C | 150°C | 117 K |
| IRFR9024N | HEXFET power MOSFET. VDSS = -55V, RDS(on) = 0.175 Ohm, ID = -11A | International-Rectifier | - | 3 | -55°C | 150°C | 117 K |
| IRFR9110 | 3.1A, 100V, 1.200 Ohm, P-Channel Power MOSFETs | Intersil-Corporation | - | - | - | - | 62 K |
| IRFR9120 | 5.6A, 100V, 0.600 Ohm, P-Channel Power MOSFETs | Intersil-Corporation | - | - | - | - | 73 K |
| IRFR9220 | 3.6A, 200V, 1.500 Ohm, P-Channel Power MOSFETs | Intersil-Corporation | - | - | - | - | 99 K |
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