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IRFR9024

Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
IRFR9024 P-Channel Enhancement Mode Field Effect Transistor [Obsolete]Fairchild-Semiconductor----379 K
IRFR9024HEXFET power MOSFET. VDSS = -60V, RDS(on) = 0.28 Ohm, ID = -8.8AInternational-Rectifier-3-55°C150°C173 K
IRFR9024HEXFET power MOSFET. VDSS = -60V, RDS(on) = 0.28 Ohm, ID = -8.8AInternational-Rectifier-3-55°C150°C173 K
IRFR9024NHEXFET power MOSFET. VDSS = -55V, RDS(on) = 0.175 Ohm, ID = -11AInternational-Rectifier-3-55°C150°C117 K
IRFR9024NHEXFET power MOSFET. VDSS = -55V, RDS(on) = 0.175 Ohm, ID = -11AInternational-Rectifier-3-55°C150°C117 K
IRFR9024NTRPower MOSFET, 55V, 11AInternational-Rectifier-3-55°C150°C117 K
IRFR9024NTRLPower MOSFET, 55V, 11AInternational-Rectifier-3-55°C150°C117 K
IRFR9024NTRRPower MOSFET, 55V, 11AInternational-Rectifier-3-55°C150°C117 K
IRFR9024TRPower MOSFET, 60V, 8.8AInternational-Rectifier-3-55°C150°C173 K
IRFR9024TRLPower MOSFET, 60V, 8.8AInternational-Rectifier-3-55°C150°C173 K
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