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IRG4BC10SD-L

Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
IRG4BC10SD-LInsulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 1.10V @ VGE = 15V, IC = 2.0AInternational-Rectifier-3-55°C150°C217 K
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