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IRG4BC20

Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
IRG4BC20Insulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 1.66V @ VGE = 15V, IC = 9.0AInternational-Rectifier-3-55°C150°C161 K
IRG4BC20FDInsulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 1.66V @ VGE = 15V, IC = 9.0AInternational-Rectifier-3-55°C150°C222 K
IRG4BC20FD-SInsulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 1.66V @ VGE = 15V, IC = 9.0AInternational-RectifierDDPak3-55°C150°C222 K
IRG4BC20KInsulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 2.27V @ VGE = 15V, IC = 9.0AInternational-Rectifier-3-55°C150°C138 K
IRG4BC20K-SInsulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 2.27V @ VGE = 15V, IC = 9.0AInternational-RectifierDDPak3-55°C150°C162 K
IRG4BC20KDInsulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 2.27V @ VGE = 15V, IC = 9.0AInternational-Rectifier-3-55°C150°C199 K
IRG4BC20KD-SInsulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 2.27V @ VGE = 15V, IC = 9.0AInternational-RectifierDDPak3-55°C150°C222 K
IRG4BC20MDInsulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 1.85V @ VGE = 15V, IC = 11AInternational-Rectifier-3-55°C150°C251 K
IRG4BC20MD-SInsulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 1.85V @ VGE = 15V, IC = 11AInternational-RectifierDDPak3-55°C150°C200 K
IRG4BC20SInsulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 1.4V @ VGE = 15V, IC = 10AInternational-Rectifier-3-55°C150°C157 K
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