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IRG4PC40

Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
IRG4PC40Insulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 1.50V @ VGE = 15V, IC = 27AInternational-Rectifier-3-55°C150°C145 K
IRG4PC40FDInsulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 1.50V @ VGE = 15V, IC = 27AInternational-Rectifier-3-55°C150°C214 K
IRG4PC40KDInsulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 2.1V @ VGE = 15V, IC = 25AInternational-Rectifier-3-55°C150°C182 K
IRG4PC40SInsulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 1.32V @ VGE = 15V, IC = 31AInternational-Rectifier-3-55°C150°C143 K
IRG4PC40UInsulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 1.72V @ VGE = 15V, IC = 20AInternational-Rectifier-3-55°C150°C148 K
IRG4PC40UDInsulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 1.72V @ VGE = 15V, IC = 20AInternational-Rectifier-3-55°C150°C245 K
IRG4PC40WInsulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 2.05V @ VGE = 15V, IC = 20AInternational-Rectifier-3-55°C150°C116 K
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