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IRG4PC50

Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
IRG4PC50Insulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 1.45V @ VGE = 15V, IC = 39AInternational-Rectifier-3-55°C150°C146 K
IRG4PC50KInsulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 1.84V @ VGE = 15V, IC = 30AInternational-Rectifier-3-55°C150°C115 K
IRG4PC50SInsulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 1.28V @ VGE = 15V, IC = 41AInternational-Rectifier-3-55°C150°C164 K
IRG4PC50UInsulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 1.65V @ VGE = 15V, IC = 27AInternational-Rectifier-3-55°C150°C147 K
IRG4PC50UDInsulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 1.65V @ VGE = 15V, IC = 27AInternational-Rectifier-3-55°C150°C213 K
IRG4PC50WInsulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 2.3V @ VGE = 15V, IC = 27AInternational-Rectifier-3-55°C150°C157 K
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