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IRG4PH40

Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
IRG4PH40KInsulated gate bipolar transistor. VCES = 1200V, VCE(on)typ. = 2.74V @ VGE = 15V, IC = 15AInternational-Rectifier-3-55°C150°C157 K
IRG4PH40KInsulated gate bipolar transistor. VCES = 1200V, VCE(on)typ. = 2.74V @ VGE = 15V, IC = 15AInternational-Rectifier-3-55°C150°C157 K
IRG4PH40KDInsulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 1200V, VCE(on)typ. = 2.74V @ VGE = 15V, IC = 15AInternational-Rectifier-3-55°C150°C217 K
IRG4PH40UInsulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 1200V, VCE(on)typ. = 2.43V @ VGE = 15V, IC = 21AInternational-Rectifier-3-55°C150°C163 K
IRG4PH40UDInsulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 1200V, VCE(on)typ. = 2.43V @ VGE = 15V, IC = 21AInternational-Rectifier-3-55°C150°C220 K
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